IGBT - IXSH15N120BD1 HIGH VOLTAGE IGBT + DIODE 1200V 30A

Brand: GERMANY

Group: Semiconductor

Subgroup: IGBT

Model / Brand: IXYS

Stock: Please Call.

قیمت: 850,000 Tomman

Download PDF file

Keywords: IXSH15N120BD1

 

 

Detail:

Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 1200V

Collector-emitter saturation voltage |Ucesat|, V: 3.4V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 30A

Maximum junction temperature (Tj), °C:

Rise time, nS: 150

Maximum collector capacity (Cc), pF:

Package: TO247